2N3663

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Voltage (VCEO) :

12V

Max Collector Current :

50mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

NPN

Mounting Type :

Through Hole

Voltage - Rated DC :

12V

Supplier Device Package :

TO-92-3

Number of Pins :

3

Collector Base Voltage (VCBO) :

30V

Frequency - Transition :

2.1GHz

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

3V

Frequency :

2.1GHz

Number of Elements :

1

hFE Min :

20

Min Operating Temperature :

-55°C

Noise Figure (dB Typ @ f) :

6.5dB @ 60MHz

Power - Max :

350mW

Max Frequency :

2.1GHz

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

350mW

Max Power Dissipation :

350mW

Mount :

Through Hole

Transistor Type :

NPN

Current - Collector (Ic) (Max) :

50mA

Continuous Collector Current :

50mA

Current Rating :

50mA

Packaging :

Bulk

Voltage - Collector Emitter Breakdown (Max) :

12V

RoHS Status :

RoHS Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 8mA 10V

Max Operating Temperature :

150°C

Gain :

1.5dB

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Base Part Number :

2N3663

Lead Free :

Lead Free

Gain Bandwidth Product :

2.1 GHz

Collector Emitter Breakdown Voltage :

12V