2N3663

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Emitter Base Voltage (VEBO) :

3V

Collector Emitter Breakdown Voltage :

12V

Max Frequency :

2.1GHz

Number of Pins :

3

Max Collector Current :

50mA

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

2.1GHz

Mount :

Through Hole

Max Power Dissipation :

350mW

Gain :

1.5dB

Power Dissipation :

350mW

hFE Min :

20

Min Operating Temperature :

-55°C

Collector Base Voltage (VCBO) :

30V

Voltage - Rated DC :

12V

Element Configuration :

Single

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

12V

Noise Figure (dB Typ @ f) :

6.5dB @ 60MHz

Voltage - Collector Emitter Breakdown (Max) :

12V

Supplier Device Package :

TO-92-3

Number of Elements :

1

Current Rating :

50mA

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 8mA 10V

Gain Bandwidth Product :

2.1 GHz

Polarity :

NPN

Mounting Type :

Through Hole

Power - Max :

350mW

Frequency :

2.1GHz

Base Part Number :

2N3663

Current - Collector (Ic) (Max) :

50mA

Max Operating Temperature :

150°C

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Continuous Collector Current :

50mA

RoHS Status :

RoHS Compliant

Packaging :

Bulk