2N3634L

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Mfr.Part #
2N3634L
Manufacturer
Microchip Technology
Package / Case
TO-205AA, TO-5-3 Metal Can
Datasheet
Download
Description
TRANS PNP 140V 1A TO5
Stock
38,585
In Stock :
38,585

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Factory Lead Time :
12 Weeks
RoHS Status :
Non-RoHS Compliant
Package / Case :
TO-205AA, TO-5-3 Metal Can
Power - Max :
1W
Collector Base Voltage (VCBO) :
140V
Pbfree Code :
No
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 50mA
Current - Collector Cutoff (Max) :
10μA
Terminal Finish :
TIN LEAD
Max Collector Current :
1A
Operating Temperature :
-65°C~200°C TJ
Mounting Type :
Through Hole
JESD-609 Code :
e0
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
HTS Code :
8541.29.00.95
Transistor Application :
AMPLIFIER
Polarity/Channel Type :
PNP
Terminal Form :
Wire
Packaging :
Bulk
Mount :
Through Hole
Configuration :
Single
Number of Elements :
1
Published :
2010
Max Power Dissipation :
1W
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 50mA 10V
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
140V
Terminal Position :
BOTTOM
Number of Terminations :
3
Transistor Type :
PNP
Datasheets
2N3634L
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N3634L from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-205AA, TO-5-3 Metal Can, Operating Temperature:-65°C~200°C TJ, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, 2N3634L pinout, 2N3634L datasheet PDF, 2N3634L amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N3634L ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N3634L


PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole

2N3634L Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 50mA.During maximum operation, collector current can be as low as 1A volts.

2N3634L Features


the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA


2N3634L Applications


There are a lot of Microsemi Corporation
2N3634L applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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