2N3634L

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Mfr.Part #
2N3634L
Manufacturer
Microchip Technology
Package / Case
TO-205AA, TO-5-3 Metal Can
Datasheet
Download
Description
TRANS PNP 140V 1A TO5
Stock
38,585
In Stock :
38,585

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Terminal Form :
Wire
Factory Lead Time :
12 Weeks
Number of Elements :
1
Number of Pins :
3
Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
HTS Code :
8541.29.00.95
Terminal Finish :
TIN LEAD
Mounting Type :
Through Hole
Transistor Type :
PNP
Mount :
Through Hole
Collector Emitter Voltage (VCEO) :
140V
RoHS Status :
Non-RoHS Compliant
Collector Base Voltage (VCBO) :
140V
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 50mA
Power - Max :
1W
Max Collector Current :
1A
Max Power Dissipation :
1W
Transistor Application :
AMPLIFIER
Transistor Element Material :
SILICON
Polarity/Channel Type :
PNP
Current - Collector Cutoff (Max) :
10μA
Radiation Hardening :
No
Published :
2010
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 50mA 10V
Pbfree Code :
No
Package / Case :
TO-205AA, TO-5-3 Metal Can
Operating Temperature :
-65°C~200°C TJ
Number of Terminations :
3
Terminal Position :
BOTTOM
Packaging :
Bulk
JESD-609 Code :
e0
Datasheets
2N3634L
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N3634L from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-205AA, TO-5-3 Metal Can, Operating Temperature:-65°C~200°C TJ, Number of Terminations:3, 2N3634L pinout, 2N3634L datasheet PDF, 2N3634L amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N3634L ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N3634L


PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole

2N3634L Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 50mA.During maximum operation, collector current can be as low as 1A volts.

2N3634L Features


the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA


2N3634L Applications


There are a lot of Microsemi Corporation
2N3634L applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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