2N3635

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Mfr.Part #
2N3635
Manufacturer
Microchip Technology
Package / Case
TO-205AA, TO-5-3 Metal Can
Datasheet
Download
Description
TRANS PNP 140V 1A TO39
Stock
14,030
In Stock :
14,030

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
AMPLIFIER
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 50mA 10V
Collector Emitter Voltage (VCEO) :
140V
ECCN Code :
EAR99
Mounting Type :
Through Hole
Configuration :
Single
Number of Elements :
1
Terminal Form :
Wire
Collector Base Voltage (VCBO) :
140V
HTS Code :
8541.29.00.95
Transistor Type :
PNP
Published :
2007
Terminal Position :
BOTTOM
Packaging :
Bulk
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-205AA, TO-5-3 Metal Can
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Polarity/Channel Type :
PNP
Number of Pins :
3
JESD-609 Code :
e0
Max Collector Current :
1A
Mount :
Through Hole
Pbfree Code :
No
Number of Terminations :
3
Current - Collector Cutoff (Max) :
10μA
Power - Max :
1W
Factory Lead Time :
12 Weeks
RoHS Status :
Non-RoHS Compliant
Terminal Finish :
TIN LEAD
Operating Temperature :
-65°C~200°C TJ
Max Power Dissipation :
1W
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 50mA
Datasheets
2N3635
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N3635 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-205AA, TO-5-3 Metal Can, Number of Pins:3, Number of Terminations:3, Operating Temperature:-65°C~200°C TJ, 2N3635 pinout, 2N3635 datasheet PDF, 2N3635 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N3635 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole

2N3635L Overview


In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 50mA.Maximum collector currents can be below 1A volts.

2N3635L Features


the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA


2N3635L Applications


There are a lot of Microsemi Corporation
2N3635L applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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