2N3635L

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Mfr.Part #
2N3635L
Manufacturer
Microchip Technology
Package / Case
TO-205AA, TO-5-3 Metal Can
Datasheet
Download
Description
TRANS PNP 140V 1A TO5
Stock
20,199
In Stock :
20,199

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2007
JESD-609 Code :
e0
Radiation Hardening :
No
Terminal Finish :
TIN LEAD
Number of Elements :
1
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 50mA 10V
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Collector Emitter Voltage (VCEO) :
140V
Transistor Type :
PNP
Current - Collector Cutoff (Max) :
10μA
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 50mA
Transistor Application :
AMPLIFIER
Mount :
Through Hole
Number of Terminations :
3
Max Power Dissipation :
1W
Factory Lead Time :
12 Weeks
Transistor Element Material :
SILICON
Terminal Form :
Wire
Number of Pins :
3
Max Collector Current :
1A
Operating Temperature :
-65°C~200°C TJ
Polarity/Channel Type :
PNP
Configuration :
Single
ECCN Code :
EAR99
Pbfree Code :
No
Packaging :
Bulk
RoHS Status :
Non-RoHS Compliant
HTS Code :
8541.29.00.95
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
1W
Terminal Position :
BOTTOM
Collector Base Voltage (VCBO) :
140V
Package / Case :
TO-205AA, TO-5-3 Metal Can
Datasheets
2N3635L
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N3635L from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Operating Temperature:-65°C~200°C TJ, Package / Case:TO-205AA, TO-5-3 Metal Can, 2N3635L pinout, 2N3635L datasheet PDF, 2N3635L amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N3635L ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N3635L


PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole

2N3635L Overview


In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 50mA.Maximum collector currents can be below 1A volts.

2N3635L Features


the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA


2N3635L Applications


There are a lot of Microsemi Corporation
2N3635L applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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