2DB1714-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Case Connection :

COLLECTOR

Max Power Dissipation :

900mW

Radiation Hardening :

No

Element Configuration :

Single

Height :

1.4mm

Power - Max :

900mW

Gain Bandwidth Product :

200MHz

Max Breakdown Voltage :

30V

Length :

4.5mm

Collector Emitter Saturation Voltage :

-370mV

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

100nA ICBO

Pin Count :

3

Emitter Base Voltage (VEBO) :

6V

Transistor Type :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA 2V

Collector Emitter Breakdown Voltage :

30V

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

30V

Published :

2008

Frequency :

200MHz

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

4

Mount :

Surface Mount

Transition Frequency :

200MHz

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

370mV @ 75mA, 1.5A

Mounting Type :

Surface Mount

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Width :

2.5mm

Max Collector Current :

2A

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Package / Case :

TO-243AA

Power Dissipation :

2W

Factory Lead Time :

9 Weeks

Weight :

51.993025mg

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Collector Emitter Voltage (VCEO) :

30V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

PNP

JESD-30 Code :

R-PSSO-F3