2DB1188Q-13
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- Mfr.Part #
- 2DB1188Q-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 32V 2A SOT89-3
- Stock
- 1,101
- In Stock ：
- 1,101
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 2A
- Terminal Finish :
- Matte Tin (Sn)
- Package / Case :
- TO-243AA
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Pin Count :
- 4
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Flat
- Height :
- 1.5mm
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 32V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- Collector Emitter Saturation Voltage :
- -800mV
- Max Breakdown Voltage :
- 32V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- -5V
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 1W
- Gain Bandwidth Product :
- 120MHz
- Transistor Type :
- PNP
- Number of Pins :
- 4
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Length :
- 4.5mm
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 120MHz
- JESD-30 Code :
- R-PSSO-F3
- Power Dissipation :
- 1W
- Width :
- 2.48mm
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Transition Frequency :
- 120MHz
- Collector Base Voltage (VCBO) :
- 40V
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 19 Weeks
- Pbfree Code :
- yes
- Weight :
- 51.993025mg
- Radiation Hardening :
- No
- Published :
- 2013
- Collector Emitter Breakdown Voltage :
- 32V
- Base Part Number :
- 2DB1188
- Transistor Element Material :
- SILICON
- Datasheets
- 2DB1188Q-13
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2DB1188Q-13 Overview
In this device, the DC current gain is 120 @ 500mA 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Input voltage breakdown is available at 32V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2DB1188Q-13 Features
the DC current gain for this device is 120 @ 500mA 3V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
a transition frequency of 120MHz
2DB1188Q-13 Applications
There are a lot of Diodes Incorporated
2DB1188Q-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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