2DB1188Q-13
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- Mfr.Part #
- 2DB1188Q-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 32V 2A SOT89-3
- Stock
- 1,101
- In Stock ：
- 1,101
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- 2DB1188
- Height :
- 1.5mm
- Transition Frequency :
- 120MHz
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- REACH SVHC :
- No SVHC
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Pin Count :
- 4
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Max Breakdown Voltage :
- 32V
- JESD-30 Code :
- R-PSSO-F3
- JESD-609 Code :
- e3
- Length :
- 4.5mm
- Published :
- 2013
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- -800mV
- Max Collector Current :
- 2A
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 1W
- Number of Pins :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 40V
- Frequency :
- 120MHz
- Gain Bandwidth Product :
- 120MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Width :
- 2.48mm
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 19 Weeks
- Max Power Dissipation :
- 1W
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 32V
- Weight :
- 51.993025mg
- Collector Emitter Voltage (VCEO) :
- 32V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Terminal Form :
- Flat
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Package / Case :
- TO-243AA
- Polarity/Channel Type :
- PNP
- Datasheets
- 2DB1188Q-13
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2DB1188Q-13 Overview
In this device, the DC current gain is 120 @ 500mA 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Input voltage breakdown is available at 32V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2DB1188Q-13 Features
the DC current gain for this device is 120 @ 500mA 3V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
a transition frequency of 120MHz
2DB1188Q-13 Applications
There are a lot of Diodes Incorporated
2DB1188Q-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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