2DB1132P-13
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- Mfr.Part #
- 2DB1132P-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 32V 1A SOT89-3
- Stock
- 7,523
- In Stock ：
- 7,523
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 7 Weeks
- Collector Emitter Breakdown Voltage :
- 32V
- Terminal Finish :
- Matte Tin (Sn)
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Package / Case :
- TO-243AA
- Transition Frequency :
- 190MHz
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 190MHz
- Pbfree Code :
- yes
- Power Dissipation :
- 1W
- Frequency :
- 190MHz
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 40V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- hFE Min :
- 82
- Height :
- 1.5mm
- Radiation Hardening :
- No
- Width :
- 2.48mm
- Collector Emitter Voltage (VCEO) :
- 32V
- JESD-609 Code :
- e3
- Base Part Number :
- 2DB1132
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 100mA 3V
- JESD-30 Code :
- R-PSSO-F3
- Published :
- 2011
- Max Collector Current :
- 1A
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 4
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Number of Elements :
- 1
- Max Power Dissipation :
- 1W
- Terminal Form :
- Flat
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Mount :
- Surface Mount
- Weight :
- 51.993025mg
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 32V
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 4.5mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2DB1132P-13
2DB1132P-13 Documents
PNP -55°C~150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2DB1132P-13 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 82 @ 100mA 3V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 190MHz is present in the part.There is a breakdown input voltage of 32V volts that it can take.Collector current can be as low as 1A volts at its maximum.
2DB1132P-13 Features
the DC current gain for this device is 82 @ 100mA 3V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 190MHz
2DB1132P-13 Applications
There are a lot of Diodes Incorporated
2DB1132P-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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