2DB1184Q-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

15W

Packaging :

Tape and Reel (TR)

JEDEC-95 Code :

TO-252AA

Mounting Type :

Surface Mount

Case Connection :

COLLECTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 500mA 3V

Weight :

260.39037mg

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Published :

2011

Radiation Hardening :

No

Max Breakdown Voltage :

50V

Factory Lead Time :

13 Weeks

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

3A

Collector Base Voltage (VCBO) :

60V

Gain Bandwidth Product :

110MHz

Frequency :

110MHz

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Transistor Element Material :

SILICON

Power Dissipation :

15W

Pbfree Code :

yes

Height :

2.4mm

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Pin Count :

4

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 2A

Transistor Application :

SWITCHING

Number of Terminations :

2

Collector Emitter Voltage (VCEO) :

50V

Mount :

Surface Mount

Polarity/Channel Type :

PNP

Width :

6.2mm

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Transition Frequency :

110MHz

Transistor Type :

PNP

Current - Collector Cutoff (Max) :

1μA ICBO

Length :

6.8mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

5V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40