2DB1184Q-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Pbfree Code :

yes

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

1μA ICBO

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

50V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

5V

Number of Terminations :

2

ECCN Code :

EAR99

Number of Elements :

1

Collector Base Voltage (VCBO) :

60V

Collector Emitter Breakdown Voltage :

50V

Pin Count :

4

Factory Lead Time :

13 Weeks

Max Power Dissipation :

15W

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 2A

Weight :

260.39037mg

Radiation Hardening :

No

Frequency :

110MHz

Gain Bandwidth Product :

110MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 500mA 3V

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

PNP

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Max Collector Current :

3A

REACH SVHC :

No SVHC

Width :

6.2mm

Published :

2011

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-252AA

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

15W

Collector Emitter Voltage (VCEO) :

50V

Length :

6.8mm

Terminal Form :

Gull wing

Transition Frequency :

110MHz

JESD-609 Code :

e3

Case Connection :

COLLECTOR

Number of Pins :

3

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Height :

2.4mm