2DB1132R-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

500nA ICBO

Element Configuration :

Single

ECCN Code :

EAR99

Max Power Dissipation :

1W

Transistor Type :

PNP

Pin Count :

3

Length :

4.5mm

Pbfree Code :

yes

Max Collector Current :

1A

Number of Elements :

1

Number of Pins :

4

Factory Lead Time :

15 Weeks

Collector Emitter Saturation Voltage :

-125mV

Width :

2.48mm

Max Breakdown Voltage :

32V

Mount :

Surface Mount

Height :

1.5mm

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Polarity/Channel Type :

PNP

Collector Emitter Voltage (VCEO) :

32V

Mounting Type :

Surface Mount

Power Dissipation :

1W

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 100mA 3V

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Case Connection :

COLLECTOR

Frequency :

190MHz

Published :

2011

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Flat

Gain Bandwidth Product :

190MHz

Package / Case :

TO-243AA

Collector Emitter Breakdown Voltage :

32V

JESD-30 Code :

R-PSSO-F3

JESD-609 Code :

e3

Number of Terminations :

3

Weight :

51.993025mg

Collector Base Voltage (VCBO) :

40V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

5V

REACH SVHC :

No SVHC

Transition Frequency :

190MHz

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

2DB1132