2DB1132R-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Form :

Flat

Transition Frequency :

190MHz

Max Breakdown Voltage :

32V

Transistor Type :

PNP

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

32V

Weight :

51.993025mg

Gain Bandwidth Product :

190MHz

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Number of Terminations :

3

Max Power Dissipation :

1W

Collector Emitter Saturation Voltage :

-125mV

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Max Collector Current :

1A

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-F3

Published :

2011

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

32V

Collector Base Voltage (VCBO) :

40V

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 100mA 3V

Polarity/Channel Type :

PNP

Power Dissipation :

1W

Package / Case :

TO-243AA

Case Connection :

COLLECTOR

Base Part Number :

2DB1132

Pin Count :

3

Mount :

Surface Mount

REACH SVHC :

No SVHC

Frequency :

190MHz

Number of Pins :

4

Height :

1.5mm

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

5V

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

2.48mm

Factory Lead Time :

15 Weeks

Length :

4.5mm

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max) :

500nA ICBO

Number of Elements :

1