2DB1132Q-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Power Dissipation :

1W

Emitter Base Voltage (VEBO) :

-5V

Collector Emitter Breakdown Voltage :

32V

Supplier Device Package :

SOT-89-3

Published :

2011

Polarity :

PNP

Gain Bandwidth Product :

190MHz

Frequency :

190MHz

Weight :

51.993025mg

Current - Collector (Ic) (Max) :

1A

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Saturation Voltage :

-125mV

Power - Max :

1W

Current - Collector Cutoff (Max) :

500nA ICBO

Max Operating Temperature :

150°C

Number of Pins :

4

Frequency - Transition :

190MHz

Max Power Dissipation :

1W

Factory Lead Time :

19 Weeks

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

32V

REACH SVHC :

No SVHC

Max Breakdown Voltage :

32V

Max Collector Current :

1A

Base Part Number :

2DB1132

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 100mA 3V

Length :

4.5mm

Collector Base Voltage (VCBO) :

40V

Collector Emitter Voltage (VCEO) :

32V

Mounting Type :

Surface Mount

Package / Case :

TO-243AA

Radiation Hardening :

No

Height :

1.5mm

Width :

2.48mm

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

PNP

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Element Configuration :

Single