2DB1182Q-13

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Mfr.Part #
2DB1182Q-13
Manufacturer
Diodes Incorporated
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP 32V 2A TO252-3
Stock
34,748
In Stock :
34,748

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-30 Code :
R-PSSO-G2
Factory Lead Time :
13 Weeks
Transistor Element Material :
SILICON
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Max Power Dissipation :
10W
Lead Free :
Lead Free
Max Collector Current :
2A
JESD-609 Code :
e3
Case Connection :
COLLECTOR
Transition Frequency :
110MHz
ECCN Code :
EAR99
Number of Elements :
1
Mounting Type :
Surface Mount
Additional Feature :
High Reliability
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
1μA ICBO
Base Part Number :
2DB1182
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 500mA 3V
Number of Terminations :
2
Weight :
3.949996g
Collector Base Voltage (VCBO) :
40V
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
260
Gain Bandwidth Product :
110MHz
Mount :
Surface Mount
Polarity/Channel Type :
PNP
Published :
2011
RoHS Status :
ROHS3 Compliant
Contact Plating :
Tin
Radiation Hardening :
No
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
40
Max Breakdown Voltage :
32V
Transistor Type :
PNP
Collector Emitter Saturation Voltage :
-800mV
Collector Emitter Breakdown Voltage :
32V
Vce Saturation (Max) @ Ib, Ic :
800mV @ 200mA, 2A
Power Dissipation :
10W
Number of Pins :
3
Packaging :
Tape and Reel (TR)
REACH SVHC :
No SVHC
Terminal Form :
Gull wing
Operating Temperature :
-55°C~150°C TJ
Collector Emitter Voltage (VCEO) :
32V
Transistor Application :
SWITCHING
Frequency :
110MHz
Emitter Base Voltage (VEBO) :
5V
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DB1182Q-13 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Base Part Number:2DB1182, Number of Terminations:2, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, 2DB1182Q-13 pinout, 2DB1182Q-13 datasheet PDF, 2DB1182Q-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DB1182Q-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated 2DB1182Q-13


PNP -55°C~150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

2DB1182Q-13 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 500mA 3V DC current gain.As it features a collector emitter saturation voltage of -800mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 110MHz in the part.Single BJT transistor can be broken down at a voltage of 32V volts.When collector current reaches its maximum, it can reach 2A volts.

2DB1182Q-13 Features


the DC current gain for this device is 120 @ 500mA 3V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz


2DB1182Q-13 Applications


There are a lot of Diodes Incorporated
2DB1182Q-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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