2DB1182Q-13

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Mfr.Part #
2DB1182Q-13
Manufacturer
Diodes Incorporated
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP 32V 2A TO252-3
Stock
34,748
In Stock :
34,748

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
PNP
Mount :
Surface Mount
Emitter Base Voltage (VEBO) :
5V
Collector Emitter Saturation Voltage :
-800mV
Time@Peak Reflow Temperature-Max (s) :
40
ECCN Code :
EAR99
Published :
2011
Transistor Type :
PNP
Max Breakdown Voltage :
32V
REACH SVHC :
No SVHC
Additional Feature :
High Reliability
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
40V
Weight :
3.949996g
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 500mA 3V
Current - Collector Cutoff (Max) :
1μA ICBO
Base Part Number :
2DB1182
Gain Bandwidth Product :
110MHz
Vce Saturation (Max) @ Ib, Ic :
800mV @ 200mA, 2A
Mounting Type :
Surface Mount
Pbfree Code :
yes
Case Connection :
COLLECTOR
Transistor Element Material :
SILICON
Contact Plating :
Tin
Terminal Form :
Gull wing
Packaging :
Tape and Reel (TR)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free :
Lead Free
Max Collector Current :
2A
Max Power Dissipation :
10W
Factory Lead Time :
13 Weeks
Frequency :
110MHz
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e3
Transition Frequency :
110MHz
Collector Emitter Voltage (VCEO) :
32V
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
32V
Transistor Application :
SWITCHING
Number of Elements :
1
Peak Reflow Temperature (Cel) :
260
Number of Pins :
3
Number of Terminations :
2
Power Dissipation :
10W
JESD-30 Code :
R-PSSO-G2
Radiation Hardening :
No
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DB1182Q-13 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2DB1182, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:2, 2DB1182Q-13 pinout, 2DB1182Q-13 datasheet PDF, 2DB1182Q-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DB1182Q-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated 2DB1182Q-13


PNP -55°C~150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

2DB1182Q-13 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 500mA 3V DC current gain.As it features a collector emitter saturation voltage of -800mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 110MHz in the part.Single BJT transistor can be broken down at a voltage of 32V volts.When collector current reaches its maximum, it can reach 2A volts.

2DB1182Q-13 Features


the DC current gain for this device is 120 @ 500mA 3V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz


2DB1182Q-13 Applications


There are a lot of Diodes Incorporated
2DB1182Q-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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