2DB1182Q-13
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- Mfr.Part #
- 2DB1182Q-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 32V 2A TO252-3
- Stock
- 34,748
- In Stock ：
- 34,748
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- -800mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Published :
- 2011
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 32V
- REACH SVHC :
- No SVHC
- Additional Feature :
- High Reliability
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 40V
- Weight :
- 3.949996g
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Base Part Number :
- 2DB1182
- Gain Bandwidth Product :
- 110MHz
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Lead Free :
- Lead Free
- Max Collector Current :
- 2A
- Max Power Dissipation :
- 10W
- Factory Lead Time :
- 13 Weeks
- Frequency :
- 110MHz
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Transition Frequency :
- 110MHz
- Collector Emitter Voltage (VCEO) :
- 32V
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 32V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Number of Terminations :
- 2
- Power Dissipation :
- 10W
- JESD-30 Code :
- R-PSSO-G2
- Radiation Hardening :
- No
- Datasheets
- 2DB1182Q-13
2DB1182Q-13 Documents
PNP -55°C~150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2DB1182Q-13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 500mA 3V DC current gain.As it features a collector emitter saturation voltage of -800mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 110MHz in the part.Single BJT transistor can be broken down at a voltage of 32V volts.When collector current reaches its maximum, it can reach 2A volts.
2DB1182Q-13 Features
the DC current gain for this device is 120 @ 500mA 3V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz
2DB1182Q-13 Applications
There are a lot of Diodes Incorporated
2DB1182Q-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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