2DB1182Q-13
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- Mfr.Part #
- 2DB1182Q-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 32V 2A TO252-3
- Stock
- 34,748
- In Stock ：
- 34,748
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 110MHz
- Max Collector Current :
- 2A
- Mounting Type :
- Surface Mount
- Published :
- 2011
- Number of Terminations :
- 2
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Power Dissipation :
- 10W
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 32V
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 10W
- Collector Base Voltage (VCBO) :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 32V
- Weight :
- 3.949996g
- Factory Lead Time :
- 13 Weeks
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -800mV
- Polarity/Channel Type :
- PNP
- Frequency :
- 110MHz
- Base Part Number :
- 2DB1182
- Gain Bandwidth Product :
- 110MHz
- Collector Emitter Breakdown Voltage :
- 32V
- Radiation Hardening :
- No
- Additional Feature :
- High Reliability
- Transistor Type :
- PNP
- Datasheets
- 2DB1182Q-13
PNP -55°C~150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2DB1182Q-13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 500mA 3V DC current gain.As it features a collector emitter saturation voltage of -800mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 110MHz in the part.Single BJT transistor can be broken down at a voltage of 32V volts.When collector current reaches its maximum, it can reach 2A volts.
2DB1182Q-13 Features
the DC current gain for this device is 120 @ 500mA 3V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz
2DB1182Q-13 Applications
There are a lot of Diodes Incorporated
2DB1182Q-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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