2DB1182Q-13
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- Mfr.Part #
- 2DB1182Q-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 32V 2A TO252-3
- Stock
- 34,748
- In Stock ：
- 34,748
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- R-PSSO-G2
- Factory Lead Time :
- 13 Weeks
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Power Dissipation :
- 10W
- Lead Free :
- Lead Free
- Max Collector Current :
- 2A
- JESD-609 Code :
- e3
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 110MHz
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Additional Feature :
- High Reliability
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Base Part Number :
- 2DB1182
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- Number of Terminations :
- 2
- Weight :
- 3.949996g
- Collector Base Voltage (VCBO) :
- 40V
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 110MHz
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Published :
- 2011
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 32V
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -800mV
- Collector Emitter Breakdown Voltage :
- 32V
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Power Dissipation :
- 10W
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 32V
- Transistor Application :
- SWITCHING
- Frequency :
- 110MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- 2DB1182Q-13
2DB1182Q-13 Documents
PNP -55°C~150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2DB1182Q-13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 500mA 3V DC current gain.As it features a collector emitter saturation voltage of -800mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 110MHz in the part.Single BJT transistor can be broken down at a voltage of 32V volts.When collector current reaches its maximum, it can reach 2A volts.
2DB1182Q-13 Features
the DC current gain for this device is 120 @ 500mA 3V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz
2DB1182Q-13 Applications
There are a lot of Diodes Incorporated
2DB1182Q-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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