2DB1119S-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Package / Case :

TO-243AA

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

PNP

Frequency :

200MHz

Transistor Application :

SWITCHING

Max Power Dissipation :

1W

JESD-30 Code :

R-PSSO-F3

Transistor Type :

PNP

Time@Peak Reflow Temperature-Max (s) :

40

Width :

2.5mm

Collector Emitter Voltage (VCEO) :

25V

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

140 @ 50mA 2V

Max Collector Current :

1A

JESD-609 Code :

e3

Height :

1.5mm

Emitter Base Voltage (VEBO) :

5V

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

200MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Number of Pins :

4

Pbfree Code :

yes

Transition Frequency :

200MHz

Number of Elements :

1

Case Connection :

COLLECTOR

Collector Base Voltage (VCBO) :

25V

Pin Count :

4

Collector Emitter Breakdown Voltage :

25V

Mount :

Surface Mount

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Flat

Published :

2007

Factory Lead Time :

15 Weeks

Weight :

51.993025mg

Radiation Hardening :

No

Length :

4.5mm

REACH SVHC :

No SVHC

Power Dissipation :

1W