2DB1119S-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

140 @ 50mA 2V

Number of Elements :

1

Terminal Form :

Flat

Pin Count :

4

Power Dissipation :

1W

Transistor Type :

PNP

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

25V

Weight :

51.993025mg

Max Collector Current :

1A

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-F3

Number of Pins :

4

Factory Lead Time :

15 Weeks

Polarity/Channel Type :

PNP

Collector Emitter Breakdown Voltage :

25V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Frequency :

200MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Max Power Dissipation :

1W

Length :

4.5mm

REACH SVHC :

No SVHC

Gain Bandwidth Product :

200MHz

Case Connection :

COLLECTOR

Published :

2007

Width :

2.5mm

Number of Terminations :

3

Package / Case :

TO-243AA

Mount :

Surface Mount

Transition Frequency :

200MHz

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

5V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

25V

Transistor Application :

SWITCHING

Height :

1.5mm