2DB1119S-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Weight :

51.993025mg

Number of Terminations :

3

Gain Bandwidth Product :

200MHz

Max Power Dissipation :

1W

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Base Voltage (VCBO) :

25V

Collector Emitter Breakdown Voltage :

25V

Number of Elements :

1

Polarity/Channel Type :

PNP

Case Connection :

COLLECTOR

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Number of Pins :

4

Pin Count :

4

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

25V

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Terminal Form :

Flat

Frequency :

200MHz

Max Collector Current :

1A

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Transistor Type :

PNP

Length :

4.5mm

Factory Lead Time :

15 Weeks

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

1W

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

140 @ 50mA 2V

Transition Frequency :

200MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2007

Height :

1.5mm

Emitter Base Voltage (VEBO) :

5V

Radiation Hardening :

No

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Width :

2.5mm

Package / Case :

TO-243AA

JESD-30 Code :

R-PSSO-F3