2DB1386R-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Width :

2.48mm

Number of Elements :

1

Terminal Form :

Flat

Current - Collector Cutoff (Max) :

500nA ICBO

Frequency :

100MHz

Emitter Base Voltage (VEBO) :

-6V

Vce Saturation (Max) @ Ib, Ic :

1V @ 100mA, 4A

Collector Emitter Breakdown Voltage :

20V

Height :

1.5mm

Gain Bandwidth Product :

100MHz

Transistor Type :

PNP

Number of Pins :

4

Package / Case :

TO-243AA

JESD-609 Code :

e3

Radiation Hardening :

No

ECCN Code :

EAR99

Number of Terminations :

4

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Power Dissipation :

1W

Weight :

130.492855mg

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Max Breakdown Voltage :

20V

Published :

2011

Transistor Element Material :

SILICON

Transition Frequency :

100MHz

Max Power Dissipation :

1W

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

30V

REACH SVHC :

No SVHC

Max Collector Current :

5A

Element Configuration :

Single

Pbfree Code :

yes

Polarity/Channel Type :

PNP

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

20V

Series :

Automotive, AEC-Q101

Case Connection :

COLLECTOR

Collector Emitter Saturation Voltage :

-250mV

Length :

4.5mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 500mA 2V

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ