2DB1713-13

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Mfr.Part #
2DB1713-13
Manufacturer
Diodes Incorporated
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 12V 3A SOT89-3
Stock
169
In Stock :
169

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Termination :
SMD/SMT
Frequency :
180MHz
Number of Elements :
1
Package / Case :
TO-243AA
hFE Min :
270
Packaging :
Tape and Reel (TR)
Operating Temperature :
-55°C~150°C TJ
Transistor Type :
PNP
Pbfree Code :
yes
Factory Lead Time :
13 Weeks
Current - Collector Cutoff (Max) :
100nA ICBO
Emitter Base Voltage (VEBO) :
6V
Time@Peak Reflow Temperature-Max (s) :
40
Power Dissipation :
2W
Width :
2.5mm
Mounting Type :
Surface Mount
Max Collector Current :
3A
RoHS Status :
ROHS3 Compliant
Case Connection :
COLLECTOR
Gain Bandwidth Product :
180MHz
Number of Pins :
4
Max Breakdown Voltage :
12V
Terminal Finish :
Matte Tin (Sn)
Published :
2008
Transition Frequency :
180MHz
Collector Base Voltage (VCBO) :
15V
Max Power Dissipation :
900mW
Vce Saturation (Max) @ Ib, Ic :
250mV @ 30mA, 1.5A
JESD-30 Code :
R-PSSO-F3
Mount :
Surface Mount
Terminal Form :
Flat
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Weight :
51.993025mg
Polarity/Channel Type :
PNP
Peak Reflow Temperature (Cel) :
260
Number of Terminations :
3
Radiation Hardening :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
270 @ 500mA 2V
Transistor Element Material :
SILICON
Base Part Number :
2DB1713
Power - Max :
900mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
4.5mm
REACH SVHC :
No SVHC
Height :
1.5mm
ECCN Code :
EAR99
Collector Emitter Voltage (VCEO) :
12V
Collector Emitter Breakdown Voltage :
12V
Element Configuration :
Single
Collector Emitter Saturation Voltage :
-250mV
Pin Count :
3
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DB1713-13 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-243AA, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:4, Number of Terminations:3, Base Part Number:2DB1713, 2DB1713-13 pinout, 2DB1713-13 datasheet PDF, 2DB1713-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DB1713-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated 2DB1713-13


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount

2DB1713-13 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 30mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 12V volts.During maximum operation, collector current can be as low as 3A volts.

2DB1713-13 Features


the DC current gain for this device is 270 @ 500mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 180MHz


2DB1713-13 Applications


There are a lot of Diodes Incorporated
2DB1713-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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