2DB1689-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

15V

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Length :

2.15mm

Current - Collector Cutoff (Max) :

100nA ICBO

Weight :

6.010099mg

Peak Reflow Temperature (Cel) :

260

Power - Max :

300mW

Height :

1mm

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Pin Count :

3

Width :

1.3mm

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

12V

Radiation Hardening :

No

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA 2V

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

PNP

Termination :

SMD/SMT

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Power Dissipation :

500mW

Max Collector Current :

1.5A

Transition Frequency :

300MHz

Gain Bandwidth Product :

300MHz

Pbfree Code :

yes

Max Power Dissipation :

300mW

Factory Lead Time :

16 Weeks

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn)

Vce Saturation (Max) @ Ib, Ic :

200mV @ 25mA, 500mA

Number of Elements :

1

hFE Min :

270

Terminal Position :

Dual

Frequency :

300MHz

Published :

2008

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

6V

Collector Emitter Breakdown Voltage :

12V

Package / Case :

SC-70, SOT-323

Transistor Element Material :

SILICON

Polarity/Channel Type :

PNP

Mounting Type :

Surface Mount

Max Breakdown Voltage :

12V