TT8M3TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-30 Code :

R-PDSO-F8

Drain to Source Voltage (Vdss) :

20V

Gate Charge (Qg) (Max) @ Vgs :

3.6nC @ 4.5V

Terminal Position :

Dual

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Max Power Dissipation :

1W

Published :

2010

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 10V

DS Breakdown Voltage-Min :

20V

Number of Elements :

2

Vgs(th) (Max) @ Id :

1V @ 1mA

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

8

ECCN Code :

EAR99

Terminal Finish :

TIN COPPER

Operating Temperature :

150°C TJ

Package / Case :

8-SMD, Flat Lead

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Pbfree Code :

yes

Factory Lead Time :

10 Weeks

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.09Ohm

Rds On (Max) @ Id, Vgs :

72m Ω @ 2.5A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

2.4A

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Pin Count :

8

JESD-609 Code :

e2

FET Feature :

Logic Level Gate, 1.5V Drive

FET Type :

N and P-Channel

Drain Current-Max (Abs) (ID) :

2.5A

Current - Continuous Drain (Id) @ 25°C :

2.5A 2.4A

Packaging :

Cut Tape (CT)