TT8M2TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

10 Weeks

Number of Channels :

2

Drain-source On Resistance-Max :

0.09Ohm

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V 20V

Turn-Off Delay Time :

120 ns

Turn On Delay Time :

9 ns

Transistor Application :

SWITCHING

Pin Count :

8

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.5A, 4.5V

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

-20V

Mounting Type :

Surface Mount

Published :

2009

FET Type :

N and P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

1.25W

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

10V

Time@Peak Reflow Temperature-Max (s) :

10

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 10V

Base Part Number :

*M2

Mount :

Surface Mount

Number of Elements :

2

Operating Temperature :

150°C TJ

Fall Time (Typ) :

85 ns

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Package / Case :

8-SMD, Flat Lead

Rise Time :

30ns

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 4.5V

Lead Free :

Lead Free

Pbfree Code :

yes

Continuous Drain Current (ID) :

2.5A

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Number of Terminations :

8

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant