TT8M2TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Factory Lead Time :

10 Weeks

Number of Channels :

2

Time@Peak Reflow Temperature-Max (s) :

10

Packaging :

Tape and Reel (TR)

Published :

2009

Continuous Drain Current (ID) :

2.5A

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

-20V

Turn On Delay Time :

9 ns

Gate to Source Voltage (Vgs) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-SMD, Flat Lead

Mount :

Surface Mount

Pin Count :

8

Transistor Application :

SWITCHING

Fall Time (Typ) :

85 ns

Mounting Type :

Surface Mount

Radiation Hardening :

No

Max Power Dissipation :

1.25W

Number of Terminations :

8

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 4.5V

Drain to Source Voltage (Vdss) :

30V 20V

FET Type :

N and P-Channel

Terminal Position :

Dual

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Turn-Off Delay Time :

120 ns

Base Part Number :

*M2

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.09Ohm

FET Feature :

Logic Level Gate

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

30ns

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.5A, 4.5V

Operating Temperature :

150°C TJ