TT8M1TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

150°C TJ

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

TIN COPPER

FET Type :

N and P-Channel

JESD-30 Code :

R-PDSO-F8

Packaging :

Cut Tape (CT)

Max Power Dissipation :

1W

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 10V

Factory Lead Time :

10 Weeks

Transistor Element Material :

SILICON

Package / Case :

8-SMD, Flat Lead

Lead Free :

Lead Free

FET Feature :

Logic Level Gate, 1.5V Drive

Number of Elements :

2

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Vgs(th) (Max) @ Id :

1V @ 1mA

Mounting Type :

Surface Mount

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

10

Power - Max :

1W

DS Breakdown Voltage-Min :

20V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.09Ohm

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Terminal Position :

Dual

JESD-609 Code :

e2

Continuous Drain Current (ID) :

2.5A

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Rds On (Max) @ Id, Vgs :

72m Ω @ 2.5A, 4.5V

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

3.6nC @ 4.5V