TPC8408,LQ(S

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2009

Current - Continuous Drain (Id) @ 25°C :

6.1A 5.3A

Number of Elements :

2

Mount :

Surface Mount

Power - Max :

450mW

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 10V

FET Type :

N and P-Channel

Power Dissipation :

1.5W

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.3V @ 100μA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Drain to Source Voltage (Vdss) :

40V

Rds On (Max) @ Id, Vgs :

32m Ω @ 3.1A, 10V

Continuous Drain Current (ID) :

5.3A

Operating Temperature :

150°C TJ