TPC8031-H(TE12LQM)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

11A

Power Dissipation :

1.9W

Published :

2009

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

13.3mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

2150pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Min Operating Temperature :

-55°C

Fall Time (Typ) :

3.9 ns

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Drain to Source Breakdown Voltage :

30V

FET Type :

N-Channel

Drain to Source Resistance :

13.3mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Supplier Device Package :

8-SOP (5.5x6.0)

Input Capacitance :

2.15nF

Rise Time :

3ns

Package / Case :

8-SOIC (0.173, 4.40mm Width)

Drain to Source Voltage (Vdss) :

30V

Max Operating Temperature :

150°C

Number of Pins :

8

Rds On Max :

13.3 mΩ