TPC8021-H(TE12LQ,M

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Rise Time :

4ns

Number of Pins :

8

Mount :

Surface Mount

Supplier Device Package :

8-SOP (5.5x6.0)

Continuous Drain Current (ID) :

11A

RoHS Status :

RoHS Compliant

Published :

2009

Power Dissipation :

1.9W

Power Dissipation-Max :

1W Ta

Min Operating Temperature :

-55°C

Package / Case :

8-SOIC (0.173, 4.40mm Width)

Drain to Source Voltage (Vdss) :

30V

Fall Time (Typ) :

4 ns

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 10V

Input Capacitance :

640pF

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.3V @ 1mA

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Rds On Max :

17 mΩ

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

17mOhm @ 5.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Resistance :

17mOhm

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

FET Type :

N-Channel