TPC8022-H(TE12LQ,M

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2007

RoHS Status :

RoHS Compliant

Operating Temperature :

150°C TJ

Drain to Source Resistance :

27mOhm

Continuous Drain Current (ID) :

7.5A

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

8

Mount :

Surface Mount

Mounting Type :

Surface Mount

Rds On Max :

27 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

7.5A Ta

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C

Vgs (Max) :

±20V

Max Operating Temperature :

150°C

Power Dissipation-Max :

1W Ta

Drain to Source Breakdown Voltage :

40V

Rise Time :

3ns

Power Dissipation :

1.9W

Vgs(th) (Max) @ Id :

2.3V @ 1mA

Drain to Source Voltage (Vdss) :

40V

FET Type :

N-Channel

Package / Case :

8-SOIC (0.173, 4.40mm Width)

Supplier Device Package :

8-SOP (5.5x6.0)

Rds On (Max) @ Id, Vgs :

27mOhm @ 3.8A, 10V

Fall Time (Typ) :

2 ns

Input Capacitance :

650pF

Gate to Source Voltage (Vgs) :

20V