TPC8018-H(TE12LQM)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Fall Time (Typ) :

11 ns

Number of Pins :

8

Drain to Source Resistance :

4.6mOhm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

5ns

Mount :

Surface Mount

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

1.9W

Package / Case :

8-SOIC (0.173, 4.40mm Width)

Continuous Drain Current (ID) :

18A

Rds On (Max) @ Id, Vgs :

4.6mOhm @ 9A, 10V

Packaging :

Tape and Reel (TR)

Input Capacitance :

2.265nF

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Power Dissipation-Max :

1W Ta

Supplier Device Package :

8-SOP (5.5x6.0)

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Min Operating Temperature :

-55°C

Rds On Max :

4.6 mΩ

Operating Temperature :

150°C TJ

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Input Capacitance (Ciss) (Max) @ Vds :

2265pF @ 10V

Vgs(th) (Max) @ Id :

2.3V @ 1mA

Max Operating Temperature :

150°C