TIP142
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- Mfr.Part #
- TIP142
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 10A TO247
- Stock
- 1,455
- In Stock ：
- 1,455
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 100V
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 10A
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 100V
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 2mA
- Collector Emitter Voltage (VCEO) :
- 100V
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 125W
- VCEsat-Max :
- 3 V
- Weight :
- 6.500007g
- Height :
- 20.15mm
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Termination :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 500
- Number of Terminations :
- 3
- Length :
- 15.75mm
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Mount :
- Through Hole
- Polarity :
- NPN
- Base Part Number :
- TIP142
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Tube
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 10A
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 10A
- Width :
- 5.15mm
- Transistor Type :
- NPN - Darlington
- Max Power Dissipation :
- 125W
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 2V
- Package / Case :
- TO-247-3
- Datasheets
- TIP142
NPN - Darlington 150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
Description
The TIP142 is a Darlington transistor with complementary power. Planar technology is used to create the devices, which have a "base island" layout and a monolithic Darlington configuration. The transistors that result have an outstanding high gain performance and a very low saturation voltage.
Features
■ Monolithic Darlington configuration
■ Integrated antiparallel collector-emitter diode
■ High DC Current Gain
Min hFE = 1000 @ IC
= 5 A, VCE = 4 V
■ Collector-Emitter Sustaining Voltage @ 30 mA
VCEO(sus) = 100 Vdc (Min)
■ Monolithic Construction with Built-In Base-Emitter Shunt Resistor
■ Pb-Free Packages are Available
Applications
■ Linear and switching industrial equipment
■ Switch
■ Amplifier
■ Calculators
■ Switched-mode power supplies
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