TIP127

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 3A 3V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

65W

Packaging :

Tube

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

500μA

JEDEC-95 Code :

TO-220AB

Power Dissipation :

65W

Pin Count :

3

Collector Emitter Saturation Voltage :

2V

Base Part Number :

TIP127

Collector Emitter Voltage (VCEO) :

100V

Element Configuration :

Single

Transistor Type :

PNP - Darlington

Contact Plating :

Tin

Emitter Base Voltage (VEBO) :

5V

Package / Case :

TO-220-3

Collector Emitter Breakdown Voltage :

100V

Transistor Application :

SWITCHING

Voltage - Rated DC :

-100V

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Width :

4.6mm

Mounting Type :

Through Hole

Weight :

9.071847g

Length :

10.4mm

Power - Max :

2W

Number of Pins :

3

JESD-609 Code :

e3

Current Rating :

-5A

Vce Saturation (Max) @ Ib, Ic :

4V @ 20mA, 5A

hFE Min :

1000

Max Collector Current :

5A

Operating Temperature :

150°C TJ

Factory Lead Time :

8 Weeks

Mount :

Through Hole

ECCN Code :

EAR99

Height :

9.15mm

Polarity :

PNP

Lead Free :

Lead Free

Number of Terminations :

3

Transistor Element Material :

SILICON

VCEsat-Max :

4 V

Collector Base Voltage (VCBO) :

100V