TIP126

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Current Rating :

-5A

Collector Base Voltage (VCBO) :

80V

Max Power Dissipation :

2W

Voltage - Rated DC :

-80V

Gain Bandwidth Product :

4MHz

Transistor Application :

AMPLIFIER

Surface Mount :

No

Radiation Hardening :

No

Continuous Collector Current :

5A

Published :

2005

hFE Min :

1000

Collector Emitter Saturation Voltage :

2V

Collector Emitter Voltage (VCEO) :

80V

ECCN Code :

EAR99

Factory Lead Time :

2 Weeks

Number of Elements :

1

JESD-609 Code :

e3

Pbfree Code :

yes

Power Dissipation :

65W

Vce Saturation (Max) @ Ib, Ic :

4V @ 20mA, 5A

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Breakdown Voltage :

80V

Time@Peak Reflow Temperature-Max (s) :

40

Polarity :

PNP

Pin Count :

3

Transistor Type :

PNP - Darlington

Base Part Number :

TIP12*

Max Collector Current :

5A

Width :

4.826mm

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

500μA

Number of Pins :

3

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 3A 3V

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

260

Weight :

4.535924g

Packaging :

Tube

Element Configuration :

Single

Mounting Type :

Through Hole

Height :

15.748mm

Length :

10.2616mm

Package / Case :

TO-220-3

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Operating Temperature :

-65°C~150°C TJ

Case Connection :

COLLECTOR

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON