TIP126
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- Mfr.Part #
- TIP126
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 5A TO220-3
- Stock
- 180
- In Stock ：
- 180
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Continuous Collector Current :
- 5A
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Weight :
- 4.535924g
- Collector Base Voltage (VCBO) :
- 80V
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -65°C~150°C TJ
- Radiation Hardening :
- No
- hFE Min :
- 1000
- Base Part Number :
- TIP12*
- Packaging :
- Tube
- Collector Emitter Saturation Voltage :
- 2V
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 5A
- Current Rating :
- -5A
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 80V
- JESD-609 Code :
- e3
- Power Dissipation :
- 65W
- Lead Free :
- Lead Free
- Transistor Type :
- PNP - Darlington
- Length :
- 10.2616mm
- Voltage - Rated DC :
- -80V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 2W
- Transistor Element Material :
- SILICON
- Published :
- 2005
- JEDEC-95 Code :
- TO-220AB
- Factory Lead Time :
- 2 Weeks
- Package / Case :
- TO-220-3
- Current - Collector Cutoff (Max) :
- 500μA
- Gain Bandwidth Product :
- 4MHz
- Surface Mount :
- No
- Polarity :
- PNP
- Number of Pins :
- 3
- Width :
- 4.826mm
- Element Configuration :
- Single
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 3V
- Height :
- 15.748mm
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 20mA, 5A
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Datasheets
- TIP126
PNP - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP126G Overview
In this device, the DC current gain is 1000 @ 3A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 20mA, 5A.A 5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
TIP126G Features
the DC current gain for this device is 1000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -5A
TIP126G Applications
There are a lot of ON Semiconductor
TIP126G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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