TIP120

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

1000

Emitter Base Voltage (VEBO) :

5V

Current Rating :

5A

Vce Saturation (Max) @ Ib, Ic :

4V @ 20mA, 5A

Height :

19.68mm

Transistor Type :

NPN - Darlington

Width :

4.6mm

VCEsat-Max :

4 V

JESD-609 Code :

e3

Base Part Number :

TIP120

Collector Emitter Saturation Voltage :

4V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

60V

Collector Emitter Breakdown Voltage :

60V

Weight :

6.000006g

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

60V

Polarity :

NPN

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Packaging :

Tube

Max Collector Current :

5A

Number of Terminations :

3

Current - Collector Cutoff (Max) :

500μA

Transistor Application :

SWITCHING

Voltage - Rated DC :

60V

Element Configuration :

Single

Mounting Type :

Through Hole

Mount :

Through Hole

Max Junction Temperature (Tj) :

150°C

Operating Temperature :

150°C TJ

Pin Count :

3

Power Dissipation :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Number of Elements :

1

Max Power Dissipation :

65W

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 3A 3V

REACH SVHC :

No SVHC

Length :

10.4mm

Terminal Finish :

Matte Tin (Sn)