TIP111

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Mfr.Part #
TIP111
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 2A TO220-3
Stock
7,373
In Stock :
7,373

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Tube
Published :
2008
Base Part Number :
TIP111
Transistor Element Material :
SILICON
Weight :
1.214g
Current - Collector Cutoff (Max) :
2mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 1A 4V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Voltage - Rated DC :
80V
Emitter Base Voltage (VEBO) :
5V
Height :
16.51mm
Transistor Type :
NPN - Darlington
Length :
10.67mm
Mounting Type :
Through Hole
Collector Emitter Voltage (VCEO) :
80V
Collector Emitter Breakdown Voltage :
80V
Collector Emitter Saturation Voltage :
2.5V
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
hFE Min :
500
Mount :
Through Hole
Element Configuration :
Single
JESD-609 Code :
e3
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Collector Base Voltage (VCBO) :
80V
Polarity :
NPN
Lead Free :
Lead Free
Pbfree Code :
yes
Max Power Dissipation :
2W
Terminal Finish :
Tin (Sn)
JEDEC-95 Code :
TO-220AB
Current Rating :
2A
Factory Lead Time :
2 Weeks
Package / Case :
TO-220-3
Max Collector Current :
2A
Width :
4.83mm
Number of Terminations :
3
Operating Temperature :
150°C TJ
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 8mA, 2A
Number of Elements :
1
Datasheets
TIP111
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. TIP111 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:TIP111, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3, Number of Terminations:3, Operating Temperature:150°C TJ, TIP111 pinout, TIP111 datasheet PDF, TIP111 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. TIP111 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. TIP111


NPN - Darlington 150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

TIP111TU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 1A 4V DC current gain.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 2A volts.

TIP111TU Features


the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A


TIP111TU Applications


There are a lot of ON Semiconductor
TIP111TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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