TIP110
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- Mfr.Part #
- TIP110
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V TO220-3
- Stock
- 588
- In Stock ：
- 588
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 2A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 1000
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 2A
- Height :
- 15.748mm
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 2.5V
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Width :
- 4.826mm
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Base Part Number :
- TIP11*
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- JESD-609 Code :
- e3
- Transistor Type :
- NPN - Darlington
- Pin Count :
- 3
- Voltage - Rated DC :
- 60V
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Base Voltage (VCBO) :
- 60V
- Published :
- 1999
- Lead Free :
- Lead Free
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation :
- 2W
- Contact Plating :
- Tin
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Operating Temperature :
- -65°C~150°C TJ
- Packaging :
- Tube
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 2mA
- Weight :
- 4.535924g
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- Continuous Collector Current :
- 2A
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 2 Weeks
- Length :
- 10.2616mm
- Number of Pins :
- 3
- Max Power Dissipation :
- 2W
- Datasheets
- TIP110
NPN - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP110G Overview
This device has a DC current gain of 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 8mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 2A volts is possible.
TIP110G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
TIP110G Applications
There are a lot of ON Semiconductor
TIP110G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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