TIP110
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- Mfr.Part #
- TIP110
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 2A TO220
- Stock
- 1,508
- In Stock ：
- 1,508
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Package / Case :
- TO-220-3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Pin Count :
- 3
- Transistor Application :
- AMPLIFIER
- Power Dissipation :
- 2W
- Case Connection :
- COLLECTOR
- Operating Temperature :
- -65°C~150°C TJ
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- TIP11*
- Pbfree Code :
- yes
- Max Collector Current :
- 2A
- Lead Free :
- Lead Free
- Weight :
- 4.535924g
- Collector Base Voltage (VCBO) :
- 60V
- Polarity :
- NPN
- Height :
- 15.748mm
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Length :
- 10.2616mm
- Continuous Collector Current :
- 2A
- hFE Min :
- 1000
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Surface Mount :
- No
- Current Rating :
- 2A
- Radiation Hardening :
- No
- Published :
- 1999
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Current - Collector Cutoff (Max) :
- 2mA
- Width :
- 4.826mm
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- 60V
- Max Power Dissipation :
- 2W
- Transistor Type :
- NPN - Darlington
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Saturation Voltage :
- 2.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- TIP110
TIP110 Documents
NPN - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP110G Overview
This device has a DC current gain of 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 8mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 2A volts is possible.
TIP110G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
TIP110G Applications
There are a lot of ON Semiconductor
TIP110G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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