TIP110
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- Mfr.Part #
- TIP110
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 2A TO220
- Stock
- 12,873
- In Stock ：
- 12,873
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 2 Weeks
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- hFE Min :
- 1000
- Collector Base Voltage (VCBO) :
- 60V
- Power Dissipation :
- 2W
- Collector Emitter Voltage (VCEO) :
- 60V
- Width :
- 4.826mm
- Current Rating :
- 2A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Polarity :
- NPN
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 2mA
- Pin Count :
- 3
- Max Power Dissipation :
- 2W
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Transistor Type :
- NPN - Darlington
- Weight :
- 4.535924g
- Continuous Collector Current :
- 2A
- Length :
- 10.2616mm
- Collector Emitter Saturation Voltage :
- 2.5V
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Height :
- 15.748mm
- JEDEC-95 Code :
- TO-220AB
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3
- Published :
- 1999
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Application :
- AMPLIFIER
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 60V
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Base Part Number :
- TIP11*
- Max Collector Current :
- 2A
- Datasheets
- TIP110
NPN - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP110G Overview
This device has a DC current gain of 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 8mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 2A volts is possible.
TIP110G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
TIP110G Applications
There are a lot of ON Semiconductor
TIP110G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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