TIP110
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- Mfr.Part #
- TIP110
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V TO220-3
- Stock
- 16,386
- In Stock ：
- 16,386
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 2.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Height :
- 15.748mm
- Number of Pins :
- 3
- Base Part Number :
- TIP11*
- Radiation Hardening :
- No
- Packaging :
- Tube
- Collector Emitter Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Width :
- 4.826mm
- Polarity :
- NPN
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Type :
- NPN - Darlington
- JESD-609 Code :
- e3
- Weight :
- 4.535924g
- Max Collector Current :
- 2A
- Voltage - Rated DC :
- 60V
- Package / Case :
- TO-220-3
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 2mA
- Factory Lead Time :
- 2 Weeks
- Power Dissipation :
- 2W
- JEDEC-95 Code :
- TO-220AB
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Continuous Collector Current :
- 2A
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Published :
- 1999
- Max Power Dissipation :
- 2W
- Current Rating :
- 2A
- hFE Min :
- 1000
- Pin Count :
- 3
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 60V
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 60V
- Mounting Type :
- Through Hole
- Length :
- 10.2616mm
- Datasheets
- TIP110
NPN - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP110G Overview
This device has a DC current gain of 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 8mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 2A volts is possible.
TIP110G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
TIP110G Applications
There are a lot of ON Semiconductor
TIP110G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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