STGF3NB60FD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Transistor Element Material :

SILICON

Max Power Dissipation :

25W

Switching Energy :

125μJ (off)

Input Type :

Standard

Rise Time :

60ns

Series :

PowerMESH™

Voltage - Rated DC :

600V

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 3A

Turn On Time :

16.5 ns

Package / Case :

TO-220-3 Full Pack

Gate-Emitter Voltage-Max :

20V

JEDEC-95 Code :

TO-220AB

Reverse Recovery Time :

45 ns

Terminal Position :

Single

Gate-Emitter Thr Voltage-Max :

5V

Turn Off Time-Nom (toff) :

535 ns

Number of Elements :

1

Lead Free :

Contains Lead

Gate Charge :

16nC

Td (on/off) @ 25°C :

12.5ns/105ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

245

Mounting Type :

Through Hole

Base Part Number :

STGF3

JESD-30 Code :

R-PSFM-T3

Case Connection :

Isolated

Operating Temperature :

150°C TJ

Transistor Application :

Motor Control

Current - Collector Pulsed (Icm) :

24A

Polarity/Channel Type :

N-Channel

Test Condition :

480V, 3A, 10 Ω, 15V

Number of Terminations :

3

Max Collector Current :

6A

Current Rating :

3A

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Collector Emitter Voltage (VCEO) :

2.4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

25W

Collector Emitter Breakdown Voltage :

600V

RoHS Status :

Non-RoHS Compliant

Packaging :

Tube

Mount :

Through Hole

Pin Count :

3