STGF10NB60SD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Length :

10.4mm

Rise Time :

460ns

Current - Collector Pulsed (Icm) :

80A

Gate-Emitter Voltage-Max :

20V

Pin Count :

3

Number of Terminations :

3

Element Configuration :

Single

Turn Off Time-Nom (toff) :

3100 ns

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

600V

Number of Elements :

1

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Operating Temperature :

-55°C~150°C TJ

Series :

PowerMESH™

Base Part Number :

STGF10

Turn On Time :

1160 ns

Factory Lead Time :

8 Weeks

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Transistor Application :

POWER CONTROL

Voltage - Rated DC :

600V

REACH SVHC :

No SVHC

Switching Energy :

600μJ (on), 5mJ (off)

JESD-609 Code :

e3

Continuous Drain Current (ID) :

20A

Max Breakdown Voltage :

600V

Collector Emitter Breakdown Voltage :

600V

Power Dissipation :

25W

Current Rating :

10A

Test Condition :

480V, 10A, 1k Ω, 15V

Terminal Finish :

Matte Tin (Sn) - annealed

Lead Free :

Lead Free

Number of Pins :

3

Gate Charge :

33nC

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

25W

Reverse Recovery Time :

37ns

Case Connection :

Isolated

Width :

4.6mm

Input Type :

Standard

Packaging :

Tube

Vce(on) (Max) @ Vge, Ic :

1.75V @ 15V, 10A

Height :

20mm

Gate-Emitter Thr Voltage-Max :

5V

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

600V

Collector Emitter Saturation Voltage :

1.8V

Max Collector Current :

23A

Polarity/Channel Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Td (on/off) @ 25°C :

700ns/1.2μs