STGF19NC60HD
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- Mfr.Part #
- STGF19NC60HD
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- IGBT 600V 16A 32W TO220FP
- Stock
- 18,591
- In Stock ：
- 18,591
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Drain to Source Voltage (Vdss) :
- 600V
- Collector Emitter Voltage (VCEO) :
- 600V
- Turn Off Time-Nom (toff) :
- 272 ns
- Turn On Delay Time :
- 25 ns
- Turn On Time :
- 32 ns
- Mounting Type :
- Through Hole
- Width :
- 4.6mm
- Rise Time :
- 7ns
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- STGF19
- Power Dissipation :
- 35W
- REACH SVHC :
- No SVHC
- Case Connection :
- Isolated
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- Input Type :
- Standard
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Height :
- 16.4mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- POWER CONTROL
- Length :
- 10.4mm
- Pin Count :
- 3
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Current Rating :
- 9A
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Packaging :
- Tube
- Current - Collector Pulsed (Icm) :
- 60A
- Gate-Emitter Voltage-Max :
- 20V
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 600V
- Turn-Off Delay Time :
- 97 ns
- Voltage - Rated DC :
- 600V
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 12A
- Continuous Drain Current (ID) :
- 16A
- Max Power Dissipation :
- 32W
- Reverse Recovery Time :
- 31 ns
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3 Full Pack
- Gate Charge :
- 53nC
- JESD-609 Code :
- e3
- Td (on/off) @ 25°C :
- 25ns/97ns
- Switching Energy :
- 85μJ (on), 189μJ (off)
- Gate-Emitter Thr Voltage-Max :
- 5.75V
- Series :
- PowerMESH™
- Max Collector Current :
- 16A
- Factory Lead Time :
- 8 Weeks
- Test Condition :
- 390V, 12A, 10 Ω, 15V
- Collector Emitter Saturation Voltage :
- 1.8V
- JEDEC-95 Code :
- TO-220AB
- ECCN Code :
- EAR99
- Datasheets
- STGF19NC60HD
STGF19NC60HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
Description
The STGF19NC60HD is a very fast IGBT with an ultrafast diode that operates at 19 A and 600 V. The device is a high-speed IGBT. It makes use of the sophisticated Power MESHTM technology, which provides an outstanding balance of switching performance and minimal on-state behavior. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that evolved to combine high efficiency and fast switching as it was developed. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.
Features
? High-current
? Low-saturation-voltage capability of bipolar transistors
? High current-handling capabilities
? Low on-voltage drop (VCE(sat))
? Very soft ultrafast recovery anti-parallel diode
Applications
? High-frequency motor drives
? SMPS and PFC in both hard switch and resonant topologies
? Power transistor
? Switched-mode power supplies
? Traction motor control
? Induction heating
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