STGF19NC60HD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Gate-Emitter Thr Voltage-Max :

5.75V

Package / Case :

TO-220-3 Full Pack

Td (on/off) @ 25°C :

25ns/97ns

Rise Time :

7ns

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Type :

Standard

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Mounting Type :

Through Hole

Turn On Time :

32 ns

Current - Collector Pulsed (Icm) :

60A

Base Part Number :

STGF19

Mount :

Through Hole

Turn On Delay Time :

25 ns

Switching Energy :

85μJ (on), 189μJ (off)

JEDEC-95 Code :

TO-220AB

Collector Emitter Breakdown Voltage :

600V

Drain to Source Voltage (Vdss) :

600V

Radiation Hardening :

No

Turn-Off Delay Time :

97 ns

Test Condition :

390V, 12A, 10 Ω, 15V

Height :

16.4mm

REACH SVHC :

No SVHC

Power Dissipation :

35W

Pin Count :

3

Collector Emitter Voltage (VCEO) :

600V

Polarity/Channel Type :

N-Channel

Voltage - Rated DC :

600V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

16A

Max Collector Current :

16A

Gate Charge :

53nC

Series :

PowerMESH™

Gate-Emitter Voltage-Max :

20V

Collector Emitter Saturation Voltage :

1.8V

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 12A

Factory Lead Time :

8 Weeks

Width :

4.6mm

Turn Off Time-Nom (toff) :

272 ns

Max Power Dissipation :

32W

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Length :

10.4mm

Case Connection :

Isolated

Lead Free :

Lead Free

Current Rating :

9A

Reverse Recovery Time :

31 ns

Transistor Application :

POWER CONTROL

JESD-609 Code :

e3

Number of Elements :

1

Transistor Element Material :

SILICON

Number of Pins :

3

Element Configuration :

Single