STGF10NC60SD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Number of Terminations :

3

Packaging :

Tube

Gate-Emitter Voltage-Max :

20V

Transistor Application :

POWER CONTROL

Collector Emitter Saturation Voltage :

1.45V

Mount :

Through Hole

Power Dissipation :

25W

Base Part Number :

STGF10

Turn-Off Delay Time :

160 ns

Switching Energy :

60μJ (on), 340μJ (off)

Turn Off Time-Nom (toff) :

560 ns

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3 Full Pack

Collector Emitter Voltage (VCEO) :

600V

Lead Free :

Lead Free

Pin Count :

3

Terminal Finish :

Matte Tin (Sn) - annealed

Case Connection :

Isolated

Additional Feature :

ULTRA FAST

Vce(on) (Max) @ Vge, Ic :

1.65V @ 15V, 5A

Gate Charge :

18nC

ECCN Code :

EAR99

JESD-609 Code :

e3

Reverse Recovery Time :

22 ns

Test Condition :

390V, 5A, 10 Ω, 15V

Element Configuration :

Single

Current - Collector Pulsed (Icm) :

25A

Collector Emitter Breakdown Voltage :

600V

JEDEC-95 Code :

TO-220AB

Polarity/Channel Type :

N-Channel

Input Type :

Standard

Td (on/off) @ 25°C :

19ns/160ns

Number of Elements :

1

Gate-Emitter Thr Voltage-Max :

5.75V

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

19 ns

Max Collector Current :

10A

Max Power Dissipation :

25W

Mounting Type :

Through Hole

Turn On Time :

22.5 ns

Series :

PowerMESH™

Transistor Element Material :

SILICON