STD9NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

790m Ω @ 2.5A, 10V

Vgs (Max) :

±25V

Mount :

Surface Mount

Fall Time (Typ) :

19 ns

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Power Dissipation-Max :

45W Tc

Gate to Source Voltage (Vgs) :

25V

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 50V

Transistor Application :

SWITCHING

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Resistance :

560mOhm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Mounting Type :

Surface Mount

Turn On Delay Time :

7 ns

Base Part Number :

STD9N

RoHS Status :

ROHS3 Compliant

Power Dissipation :

70W

FET Type :

N-Channel

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Series :

MDmesh™ II

Factory Lead Time :

16 Weeks

Operating Temperature :

150°C TJ

Avalanche Energy Rating (Eas) :

150 mJ

Turn-Off Delay Time :

45 ns

Continuous Drain Current (ID) :

5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

ECCN Code :

EAR99

Number of Elements :

1

Rise Time :

16ns

Drain to Source Breakdown Voltage :

500V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

5A Tc