STD95N4LF3
- Mfr.Part #
- STD95N4LF3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A DPAK
- Stock
- 2,869
- In Stock :
- 2,869
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 80A
- JESD-609 Code :
- e3
- Base Part Number :
- STD95
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Mount :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Turn-Off Delay Time :
- 45 ns
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Fall Time (Typ) :
- 11 ns
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 110W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Case Connection :
- DRAIN
- Rise Time :
- 45ns
- Pin Count :
- 3
- Resistance :
- 6mOhm
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation :
- 110W
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 16V
- FET Type :
- N-Channel
- Turn On Delay Time :
- 7.5 ns
- Vgs (Max) :
- ±16V
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Series :
- STripFET™ III
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Drain to Source Breakdown Voltage :
- 40V
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 40A, 10V
- Number of Elements :
- 1
- Datasheets
- STD95N4LF3
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N-Channel Tape & Reel (TR) 6m Ω @ 40A, 10V ±16V 2500pF @ 25V 70nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD95N4LF3 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 400 mJ.A device's maximal input capacitance is 2500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 45 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.This device reduces its overall power consumption by using drive voltage (5V 10V).
STD95N4LF3 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 45 ns
STD95N4LF3 Applications
There are a lot of STMicroelectronics
STD95N4LF3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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