STD95N4F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - annealed

Power Dissipation :

110W

Resistance :

5.8mOhm

Pin Count :

3

Lead Free :

Lead Free

Fall Time (Typ) :

15 ns

Continuous Drain Current (ID) :

80A

JESD-609 Code :

e3

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

STripFET™ III

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

400 mJ

Number of Pins :

3

Mount :

Surface Mount

Turn-Off Delay Time :

40 ns

FET Type :

N-Channel

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

40V

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn On Delay Time :

15 ns

Operating Temperature :

-55°C~175°C TJ

Base Part Number :

STD95

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Power Dissipation-Max :

110W Tc

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 40A, 10V

Rise Time :

50ns

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Case Connection :

DRAIN