STD95N4F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Case Connection :

DRAIN

Continuous Drain Current (ID) :

80A

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

40V

Element Configuration :

Single

Number of Terminations :

2

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Series :

STripFET™ III

Vgs (Max) :

±20V

Fall Time (Typ) :

15 ns

Turn-Off Delay Time :

40 ns

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

4V @ 250µA

Avalanche Energy Rating (Eas) :

400 mJ

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

50ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Pin Count :

3

ECCN Code :

EAR99

Number of Elements :

1

Mounting Type :

Surface Mount

Base Part Number :

STD95

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn) - annealed

Terminal Form :

Gull wing

Radiation Hardening :

No

Power Dissipation :

110W

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 40A, 10V

FET Type :

N-Channel

Resistance :

5.8mOhm

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

80A Tc

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

15 ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

110W Tc

JESD-609 Code :

e3