STD95NH02LT4
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- Mfr.Part #
- STD95NH02LT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 24V 80A DPAK
- Stock
- 8,767
- In Stock ：
- 8,767
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Fall Time (Typ) :
- 20 ns
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Power Dissipation-Max :
- 100W Tc
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Base Part Number :
- STD95
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation :
- 100W
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Input Capacitance (Ciss) (Max) @ Vds :
- 2070pF @ 15V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Voltage - Rated DC :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 320A
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 5V
- ECCN Code :
- EAR99
- Rise Time :
- 110ns
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 80A
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current Rating :
- 80A
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 24V
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 40A, 10V
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- LOW THRESHOLD
- Series :
- STripFET™
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -55°C~175°C TJ
- Resistance :
- 5mOhm
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 47 ns
- Reach Compliance Code :
- not_compliant
- Datasheets
- STD95NH02LT4
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N-Channel Tape & Reel (TR) 5m Ω @ 40A, 10V ±20V 2070pF @ 15V 17nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
STD95NH02LT4 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 600 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2070pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 24V, and this device has a drainage-to-source breakdown voltage of 24VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 47 ns.Peak drain current is 320A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.
STD95NH02LT4 Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 47 ns
based on its rated peak drain current 320A.
STD95NH02LT4 Applications
There are a lot of STMicroelectronics
STD95NH02LT4 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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