STD90N03L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

350 mJ

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation :

95W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

33 ns

Additional Feature :

LOW THRESHOLD

Mounting Type :

Surface Mount

Base Part Number :

STD90

Rise Time :

135ns

Transistor Element Material :

SILICON

Number of Elements :

1

Power Dissipation-Max :

95W Tc

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Pulsed Drain Current-Max (IDM) :

320A

Drain-source On Resistance-Max :

0.0057Ohm

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

1V @ 250μA

ECCN Code :

EAR99

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Terminal Form :

Gull wing

Turn-Off Delay Time :

24 ns

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 40A, 10V

Number of Terminations :

2

Case Connection :

DRAIN

Series :

STripFET™ III

Continuous Drain Current (ID) :

80A

Input Capacitance (Ciss) (Max) @ Vds :

2805pF @ 25V

Transistor Application :

SWITCHING

Number of Pins :

8

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

30V