STD901T
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- Mfr.Part #
- STD901T
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 350V 4A DPAK
- Stock
- 21,511
- In Stock ：
- 21,511
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 35W
- Packaging :
- Cut Tape (CT)
- Factory Lead Time :
- 8 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 350V
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 4A
- Transistor Type :
- NPN - Darlington
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mount :
- Surface Mount
- Base Part Number :
- STD901
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 2V
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1800 @ 2A 2V
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 20mA, 2A
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity :
- NPN
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 350V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Number of Pins :
- 3
- Max Power Dissipation :
- 35W
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100μA
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 350V
- Datasheets
- STD901T
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NPN - Darlington 150°C TJ 100μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Cut Tape (CT) Surface Mount
STD901T Overview
In this device, the DC current gain is 1800 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 20mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 350V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
STD901T Features
the DC current gain for this device is 1800 @ 2A 2V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 2A
the emitter base voltage is kept at 5V
STD901T Applications
There are a lot of STMicroelectronics
STD901T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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