STD901T
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- Mfr.Part #
- STD901T
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 350V 4A DPAK
- Stock
- 21,511
- In Stock ：
- 21,511
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Max Breakdown Voltage :
- 350V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 20mA, 2A
- Number of Terminations :
- 2
- Collector Emitter Breakdown Voltage :
- 350V
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Saturation Voltage :
- 2V
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Packaging :
- Cut Tape (CT)
- Current - Collector Cutoff (Max) :
- 100μA
- Polarity :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1800 @ 2A 2V
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN - Darlington
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 350V
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 4A
- Base Part Number :
- STD901
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 35W
- Power - Max :
- 35W
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- Datasheets
- STD901T
STD901T Documents
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NPN - Darlington 150°C TJ 100μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Cut Tape (CT) Surface Mount
STD901T Overview
In this device, the DC current gain is 1800 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 20mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 350V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
STD901T Features
the DC current gain for this device is 1800 @ 2A 2V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 2A
the emitter base voltage is kept at 5V
STD901T Applications
There are a lot of STMicroelectronics
STD901T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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