STD95N2LH5
- Mfr.Part #
- STD95N2LH5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 80A DPAK
- Stock
- 1,972
- In Stock :
- 1,972
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Base Part Number :
- STD95
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Width :
- 6.2mm
- Series :
- STripFET™ V
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~175°C TJ
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 25V
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 70W
- Height :
- 2.4mm
- Rds On (Max) @ Id, Vgs :
- 4.5m Ω @ 40A, 10V
- Resistance :
- 4.5mOhm
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 80A
- Lead Free :
- Lead Free
- Number of Terminations :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 22V
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 7 ns
- Length :
- 6.6mm
- Gate Charge (Qg) (Max) @ Vgs :
- 13.4nC @ 5V
- Turn-Off Delay Time :
- 22 ns
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Termination :
- SMD/SMT
- JESD-30 Code :
- R-PSSO-G2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Elements :
- 1
- Rise Time :
- 38ns
- Element Configuration :
- Single
- Dual Supply Voltage :
- 25V
- Nominal Vgs :
- 1 V
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 1817pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Power Dissipation-Max :
- 70W Tc
- Turn On Delay Time :
- 7 ns
- FET Type :
- N-Channel
- Vgs (Max) :
- ±22V
- Datasheets
- STD95N2LH5
STD95N2LH5 Documents
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N-Channel Tape & Reel (TR) 4.5m Ω @ 40A, 10V ±22V 1817pF @ 25V 13.4nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
STD95N2LH5 Description
This STripFETTMV Power MOSFET technology is one of the most recent advancements, and it has been specifically tuned to achieve extremely low on-state resistance while simultaneously giving one of the best-in-class FOMs (figure of merit).In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
STD95N2LH5 Features
-
Industry benchmark RDS(on) * Qg
-
RDS on-resistance is really low (on)
-
Avalanche toughness is high.
-
Gate drive power losses are low.
STD95N2LH5 Applications
Switching applications
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