STD95N3LLH6
- Mfr.Part #
- STD95N3LLH6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 80A DPAK
- Stock
- 14,883
- In Stock :
- 14,883
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Matte Tin (Sn)
- JESD-30 Code :
- R-PSSO-G2
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Height :
- 2.4mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rise Time :
- 91ns
- Turn On Delay Time :
- 19 ns
- Pbfree Code :
- yes
- Length :
- 6.6mm
- Drain to Source Breakdown Voltage :
- 30V
- Number of Pins :
- 3
- Series :
- DeepGATE™, STripFET™ VI
- Power Dissipation-Max :
- 70W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Operating Temperature :
- 175°C TJ
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 24.5 ns
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 2200pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Resistance :
- 4.2mOhm
- Peak Reflow Temperature (Cel) :
- 260
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Power Dissipation :
- 70W
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- 1V
- Continuous Drain Current (ID) :
- 80A
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 4.5V
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Width :
- 6.2mm
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 4.2m Ω @ 40A, 10V
- Fall Time (Typ) :
- 23.4 ns
- Base Part Number :
- STD95
- Lead Free :
- Lead Free
- Datasheets
- STD95N3LLH6
STD95N3LLH6 Documents
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N-Channel Tape & Reel (TR) 4.2m Ω @ 40A, 10V ±20V 2200pF @ 25V 20nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
STD95N3LLH6 MOSFET uses the 6th generation, which has a novel gate design. STD95N3LLH6 resultant Power MOSFET has one of the lowest RDS(on) across all of the packages. STD95N3LLH6 IC has the following characteristic: High avalanche ruggedness, Extremely low on-resistance RDS(on), Low gate drive power losses.
STD95N3LLH6 Features
RDS(on) * Qg industry benchmark
High avalanche ruggedness
Extremely low on-resistance RDS(on)
Low gate drive power losses
STD95N3LLH6 Applications
Switching applications
PFC
server/telecom power
FPD TV power
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