STD95N3LLH6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

150 mJ

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Lead Free :

Lead Free

Power Dissipation-Max :

70W Tc

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

30V

ECCN Code :

EAR99

Resistance :

4.2mOhm

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Fall Time (Typ) :

23.4 ns

Operating Temperature :

175°C TJ

Vgs (Max) :

±20V

Mount :

Surface Mount

Turn-Off Delay Time :

24.5 ns

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Number of Elements :

1

Continuous Drain Current (ID) :

80A

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Length :

6.6mm

Width :

6.2mm

Threshold Voltage :

1V

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Terminal Form :

Gull wing

Height :

2.4mm

Series :

DeepGATE™, STripFET™ VI

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Base Part Number :

STD95

Case Connection :

DRAIN

Number of Terminations :

2

Rise Time :

91ns

JESD-609 Code :

e3

Turn On Delay Time :

19 ns

Number of Pins :

3

Power Dissipation :

70W

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 40A, 10V

Radiation Hardening :

No

Pbfree Code :

yes