STD9NM40N
- Mfr.Part #
- STD9NM40N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 5.6A DPAK
- Stock
- 1,127
- In Stock :
- 1,127
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 5.6A Tc
- Vgs (Max) :
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds :
- 365pF @ 50V
- Continuous Drain Current (ID) :
- 5.6A
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Power Dissipation-Max :
- 60W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 400V
- Lifecycle Status :
- NRND (Last Updated: 8 months ago)
- Base Part Number :
- STD9N
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 25V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 60W
- Rds On (Max) @ Id, Vgs :
- 790m Ω @ 2.5A, 10V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Series :
- MDmesh™ II
- Number of Pins :
- 3
- Fall Time (Typ) :
- 8.8 ns
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 25 ns
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Rise Time :
- 4.4ns
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Datasheets
- STD9NM40N
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N-Channel Tape & Reel (TR) 790m Ω @ 2.5A, 10V ±25V 365pF @ 50V 14nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD9NM40N Overview
The maximum input capacitance of this device is 365pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 5.6A.When VGS=400V, and ID flows to VDS at 400VVDS, the drain-source breakdown voltage is 400V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STD9NM40N Features
a continuous drain current (ID) of 5.6A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 25 ns
STD9NM40N Applications
There are a lot of STMicroelectronics
STD9NM40N applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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