STD6NM60N-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

4.6A

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

4.6A Tc

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Terminations :

3

Drain-source On Resistance-Max :

0.92Ohm

Power Dissipation-Max :

45W Tc

Qualification Status :

Not Qualified

Pin Count :

3

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Rise Time :

8ns

Number of Pins :

3

Power Dissipation :

45W

FET Type :

N-Channel

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

600V

Avalanche Energy Rating (Eas) :

65 mJ

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

9 ns

Rds On (Max) @ Id, Vgs :

920m Ω @ 2.3A, 10V

Gate to Source Voltage (Vgs) :

25V

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Through Hole

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

18.4A

Series :

MDmesh™ II

JESD-609 Code :

e3

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±25V

Turn-Off Delay Time :

40 ns

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 50V

Transistor Element Material :

SILICON

Base Part Number :

STD6N