STD65N55LF3
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- Mfr.Part #
- STD65N55LF3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 80A DPAK
- Stock
- 10,770
- In Stock ：
- 10,770
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Power Dissipation :
- 110W
- Series :
- STripFET™ III
- Input Capacitance (Ciss) (Max) @ Vds :
- 2200pF @ 25V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Drain to Source Breakdown Voltage :
- 55V
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 5V
- Rise Time :
- 25ns
- Turn On Delay Time :
- 10 ns
- Additional Feature :
- LOW THRESHOLD
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 80A
- Number of Terminations :
- 2
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Turn-Off Delay Time :
- 50 ns
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 32A, 10V
- Element Configuration :
- Single
- Power Dissipation-Max :
- 110W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Fall Time (Typ) :
- 10 ns
- Resistance :
- 7mOhm
- Base Part Number :
- STD65N
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Pin Count :
- 3
- Datasheets
- STD65N55LF3
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N-Channel Tape & Reel (TR) 8.5m Ω @ 32A, 10V ±20V 2200pF @ 25V 20nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
STD65N55LF3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2200pF @ 25V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.Using VGS=55V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 55V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 50 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
STD65N55LF3 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 50 ns
STD65N55LF3 Applications
There are a lot of STMicroelectronics
STD65N55LF3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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