STD60NH03L-1
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- Mfr.Part #
- STD60NH03L-1
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 60A I-PAK
- Stock
- 38,515
- In Stock ：
- 38,515
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 60A
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Pulsed Drain Current-Max (IDM) :
- 240A
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSIP-T3
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 19 ns
- Series :
- STripFET™ III
- Current Rating :
- 60A
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2200pF @ 25V
- Voltage - Rated DC :
- 30V
- Drain to Source Breakdown Voltage :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 5V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.017Ohm
- Power Dissipation :
- 70W
- Power Dissipation-Max :
- 70W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Additional Feature :
- LOW THRESHOLD
- Packaging :
- Tube
- Base Part Number :
- STD60N
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Fall Time (Typ) :
- 15 ns
- Rise Time :
- 95ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Peak Reflow Temperature (Cel) :
- 260
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 30A, 10V
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- STD60NH03L-1
N-Channel Tube 9m Ω @ 30A, 10V ±20V 2200pF @ 25V 21nC @ 5V TO-251-3 Short Leads, IPak, TO-251AA
STD60NH03L-1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2200pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 60A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 19 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 240A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (5V 10V), this device helps reduce its overall power consumption.
STD60NH03L-1 Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 240A.
STD60NH03L-1 Applications
There are a lot of STMicroelectronics
STD60NH03L-1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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