STD60NF55LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Fall Time (Typ) :

35 ns

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 5V

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Breakdown Voltage :

55V

Terminal Finish :

Matte Tin (Sn) - annealed

Width :

6.2mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

60A

JESD-30 Code :

R-PSSO-G2

Series :

STripFET™ II

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Vgs (Max) :

±15V

Pulsed Drain Current-Max (IDM) :

240A

Length :

6.6mm

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

400 mJ

RoHS Status :

ROHS3 Compliant

Additional Feature :

LOW THRESHOLD

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

110W

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Application :

SWITCHING

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

15m Ω @ 30A, 10V

JEDEC-95 Code :

TO-252AA

Number of Pins :

3

Turn On Delay Time :

30 ns

Input Capacitance (Ciss) (Max) @ Vds :

1950pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

REACH SVHC :

No SVHC

Termination :

SMD/SMT

Nominal Vgs :

2 V

Threshold Voltage :

2V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Voltage - Rated DC :

55V

Rise Time :

180ns

Case Connection :

DRAIN

Base Part Number :

STD60N

Turn-Off Delay Time :

80 ns

ECCN Code :

EAR99

Power Dissipation-Max :

100W Tc

Number of Elements :

1

Continuous Drain Current (ID) :

30A

Dual Supply Voltage :

55V

Gate to Source Voltage (Vgs) :

15V

Number of Terminations :

2

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

Height :

2.4mm